Please use this identifier to cite or link to this item: http://dspace2020.uniten.edu.my:8080/handle/123456789/8335
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dc.contributor.authorFederighi, Marco
dc.contributor.authorOthman, Noor
dc.contributor.authorDi Pasquale, Fabrizio
dc.date.accessioned2018-02-15T02:47:37Z-
dc.date.available2018-02-15T02:47:37Z-
dc.date.issued1998
dc.identifier.urihttp://dspace.uniten.edu.my/jspui/handle/123456789/8335-
dc.description.abstractConsiderable advances have been made in the study of Er-doped waveguides for telecommunications application. These devices have been developed to allow on-chip integration between active and passive components, and differ from Er-doped fiber amplifiers in their much smaller size. To be of any use, these devices must provide gains of the order of a few dB/cm, which can be achieved with Er concentrations of about 1020 ions/cm3, or about an order of magnitude higher than in fibers. Furthermore, they should be fabricated at low temperature or co-doped with Al or P oxides to prevent Er ion pair formation.
dc.titleErbium-doped waveguide devices for WDM applications
item.grantfulltextnone-
item.fulltextNo Fulltext-
Appears in Collections:COGS Scholarly Publication
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