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http://dspace2020.uniten.edu.my:8080/handle/123456789/5990| Title: | InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes | Authors: | Ker, P.J. Marshall, A. Gomes, R. David, J.P. Ng, J.S. Tan, C.H. |
Issue Date: | 2011 | Abstract: | Avalanche gain and excess noise characteristics of InAs APDs showed that high gain can be achieved with excess noise factor F∼1.5 across temperatures ranging from 77 to 298K. © 2011 IEEE. |
| Appears in Collections: | COE Scholarly Publication |
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