Please use this identifier to cite or link to this item: http://dspace2020.uniten.edu.my:8080/handle/123456789/5990
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dc.contributor.authorKer, P.J.en_US
dc.contributor.authorMarshall, A.en_US
dc.contributor.authorGomes, R.en_US
dc.contributor.authorDavid, J.P.en_US
dc.contributor.authorNg, J.S.en_US
dc.contributor.authorTan, C.H.en_US
dc.date.accessioned2017-12-08T07:48:16Z-
dc.date.available2017-12-08T07:48:16Z-
dc.date.issued2011-
dc.description.abstractAvalanche gain and excess noise characteristics of InAs APDs showed that high gain can be achieved with excess noise factor F∼1.5 across temperatures ranging from 77 to 298K. © 2011 IEEE.en_US
dc.language.isoen_USen_US
dc.relation.ispartofInAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes. In IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp. 276-277). [6110533]en_US
dc.titleInAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodesen_US
dc.typeConference Proceedingen_US
dc.identifier.doi10.1109/PHO.2011.6110533-
item.cerifentitytypePublications-
item.languageiso639-1en_US-
item.fulltextNo Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextnone-
item.openairetypeConference Proceeding-
Appears in Collections:COE Scholarly Publication
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