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http://dspace2020.uniten.edu.my:8080/handle/123456789/5987| Title: | InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product | Authors: | Ker, P.J. Marshall, A.R.J. Krysa, A.B. David, J.P.R. Tan, C.H. |
Issue Date: | 2012 | Abstract: | InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively. © 2012 IEEE. |
| Appears in Collections: | COE Scholarly Publication |
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