Please use this identifier to cite or link to this item: http://dspace2020.uniten.edu.my:8080/handle/123456789/5987
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dc.contributor.authorKer, P.J.-
dc.contributor.authorMarshall, A.R.J.-
dc.contributor.authorKrysa, A.B.-
dc.contributor.authorDavid, J.P.R.-
dc.contributor.authorTan, C.H.-
dc.date.accessioned2017-12-08T07:48:15Z-
dc.date.available2017-12-08T07:48:15Z-
dc.date.issued2012-
dc.description.abstractInAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively. © 2012 IEEE.-
dc.language.isoen_US-
dc.relation.ispartofInAs avalanche photodiodes for X-ray detection. In 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 (pp. 2071-2073). [6154421] Institute of Electrical and Electronics Engineers Inc.-
dc.titleInAs electron avalanche photodiodes with 580 GHz gain-bandwidth product-
dc.typeConference Proceeding-
dc.identifier.doi10.1109/NSSMIC.2011.6154421-
item.cerifentitytypePublications-
item.languageiso639-1en_US-
item.fulltextNo Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextnone-
item.openairetypeConference Proceeding-
Appears in Collections:COE Scholarly Publication
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