Please use this identifier to cite or link to this item: http://dspace2020.uniten.edu.my:8080/handle/123456789/5665
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dc.contributor.authorHerrnsdorf, J.en_US
dc.contributor.authorMcKendry, J.J.D.en_US
dc.contributor.authorZhang, S.en_US
dc.contributor.authorXie, E.en_US
dc.contributor.authorFerreira, R.en_US
dc.contributor.authorMassoubre, D.en_US
dc.contributor.authorZuhdi, A.M.en_US
dc.contributor.authorHenderson, R.K.en_US
dc.contributor.authorUnderwood, I.en_US
dc.contributor.authorWatson, S.en_US
dc.contributor.authorKelly, A.E.en_US
dc.contributor.authorGu, E.en_US
dc.contributor.authorDawson, M.D.en_US
dc.date.accessioned2017-12-08T06:41:40Z-
dc.date.available2017-12-08T06:41:40Z-
dc.date.issued2015-
dc.description.abstractDisplays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 106 cd/m2. © 1963-2012 IEEE.en_US
dc.language.isoen_USen_US
dc.relation.ispartofIEEE Transactions on Electron Devices Volume 62, Issue 6, 1 June 2015, Article number 7084141, Pages 1918-1925en_US
dc.titleActive-matrix GaN micro light-emitting diode display with unprecedented brightnessen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2015.2416915-
item.cerifentitytypePublications-
item.languageiso639-1en_US-
item.fulltextNo Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextnone-
item.openairetypeArticle-
Appears in Collections:COE Scholarly Publication
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