Please use this identifier to cite or link to this item: http://dspace2020.uniten.edu.my:8080/handle/123456789/5665
Title: Active-matrix GaN micro light-emitting diode display with unprecedented brightness
Authors: Herrnsdorf, J.
McKendry, J.J.D.
Zhang, S.
Xie, E.
Ferreira, R.
Massoubre, D.
Zuhdi, A.M.
Henderson, R.K.
Underwood, I.
Watson, S.
Kelly, A.E.
Gu, E.
Dawson, M.D.
Issue Date: 2015
Abstract: Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 106 cd/m2. © 1963-2012 IEEE.
Appears in Collections:COE Scholarly Publication

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