Please use this identifier to cite or link to this item: http://dspace2020.uniten.edu.my:8080/handle/123456789/21100
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dc.contributor.authorZarabar F.I.en_US
dc.contributor.authorZuhdi A.W.M.en_US
dc.contributor.authorBahrudin M.S.en_US
dc.contributor.authorAbdullah S.F.en_US
dc.contributor.authorHasani A.H.en_US
dc.date.accessioned2021-09-02T06:57:39Z-
dc.date.available2021-09-02T06:57:39Z-
dc.date.issued2019-
dc.identifier.urihttp://dspace2020.uniten.edu.my:8080/handle/123456789/21100-
dc.description.abstractWe simulated the effect of band gap grading in the CIGS absorber layer; in terms of performance parameters of the cell and the electric field across the absorber layer. Band gap grading can be accomplished through variation of Ga composition as a function of thickness across the absorber layer. Based on analysis on four different band gap profiles, it is shown that cell with double graded band gap structure reaches the highest efficiency of 22.52%. © 2019 IEEE.en_US
dc.language.isoenen_US
dc.titleNumerical modelling of graded bandgap CIGS solar cell for performance improvementen_US
dc.typeconference paperen_US
item.cerifentitytypePublications-
item.languageiso639-1en-
item.fulltextWith Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_5794-
item.grantfulltextreserved-
item.openairetypeconference paper-
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