Browsing by Author Majlis, B.Y.
Showing results 1 to 7 of 7
| Issue Date | Title | Author(s) |
|---|---|---|
| 2011 | Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Elgomati, H.A. ; Majlis, B.Y. |
| 2011 | Application of Taguchi method in the optimization of process variation for 32nm CMOS technology | Elgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Apte, P.R. |
| 2011 | Cobalt silicide and titanium silicide effects on nano devices | Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. ; Ahmad, I. ; Zaharim, A. ; Hamid, F.A. |
| 2017 | Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium | Sahari, S.K. ; Kashif, M. ; Sutan, N.M. ; Embong, Z. ; Nik Zaini Fathi, N.A.F. ; Hamzah, A.A. ; Sapawi, R. ; Majlis, B.Y. ; Ahmad, I. |
| 2012 | Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal array | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Hamid, A.M.A. ; Menon, P.S. ; Elgomati, H.A. ; Majlis, B.Y. ; Apte, P.R. |
| 2011 | Optimizing 35nm NMOS devices V TH and I LEAK by controlling active area and halo implantation dosage | Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. ; Ahmad, I. ; Zaharim, A. ; Hamid, F.A. |
| 2011 | Statistical optimization for process parameters to reduce variability of 32 nm PMOS transistor threshold voltage | Elgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Mohamad, T.Z. ; Apte, P.R. |