| Issue Date | Title | Author(s) |
| 2011 | Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K | Marshall, A.R.J. ; Vines, P. ; Ker, P.J. ; David, J.P.R. ; Tan, C.H. |
| 2011 | High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit | Marshall, A.R.J. ; Ker, P.J. ; Krysa, A. ; David, J.P.R. ; Tan, C.H. |
| 2013 | High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications | Ker, P.J. ; Tan, C.H. ; David, J.P.R. |
| 2012 | InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product | Ker, P.J. ; Marshall, A.R.J. ; Krysa, A.B. ; David, J.P.R. ; Tan, C.H. |
| 2012 | Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing | Ker, P.J. ; Marshall, A.R.J. ; David, J.P.R. ; Tan, C.H. |
| 2016 | Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging | Ker, P.J. ; Marshall, A.R.J. ; Tan, C.H. ; David, J.P.R. |
| 2012 | Temperature dependence of gain and excess noise in InAs electron avalanche photodiodes | Ker, P.J. ; David, J.P.R. ; Tan, C.H. |
| 2011 | Temperature dependence of leakage current in InAs avalanche photodiodes | Ker, P.J. ; Marshall, A.R.J. ; Krysa, A.B. ; David, J.P.R. ; Tan, C.H. |