| Issue Date | Title | Author(s) |
| 2014 | Application of Taguchi method in designing a 22nm high-k/metal gate NMOS transistor | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. |
| 2013 | Design and optimization of 22 nm gate length high-k/metal gate NMOS transistor | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Elgomati, H.A. ; Salehuddin, F. |
| 2012 | Design and optimization of 22nm NMOS transistor | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. |
| 2015 | Development of process parameters for 22 nm PMOS using 2-D analytical modeling | Maheran, A.H.A. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Faizah, Z.A.N. |
| 2014 | Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. |
| 2014 | Effect of process parameter variability on the threshold voltage of downscaled 22nm PMOS using taguchi method | Maheran, A.H.A. ; Menon, P.S. ; Shaari, S. ; Kalaivani, T. ; Ahmad, I. ; Faizah, Z.A.N. ; Apte, P.R. |
| 2014 | Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi method | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. |
| 2015 | Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method | Maheran, A.H.A. ; Menon, P.S. ; Shaari, S. ; Ahmad, I. ; Faizah, Z.A.N. |
| 2015 | Structural, morphological, electrical and electron transport studies in ZnO–rGO (wt% = 0.01, 0.05 and 0.1) based dye-sensitized solar cell | Abdullah, H. ; Atiqah, N.A. ; Omar, A. ; Asshaari, I. ; Mahalingam, S. ; Razali, Z. ; Shaari, S. ; Mandeep, J.S. ; Misran, H. |