Browsing by Author Kaharudin, K.E.

Showing results 1 to 5 of 8
Issue DateTitleAuthor(s)
2016Application of taguchi method with the interaction test for lower DIBL IN WSix/TiO2 channel vertical double gate NMOSKaharudin, K.E. ; Salehuddin, F. ; Zain, A.S.M. ; Aziz, M.N.I.A. ; Ahmad, I. 
2016Electrical characterization of different high-k dielectrics with tungsten silicide in vertical double gate nmos structureKaharudin, K.E. ; Salehuddin, F. ; Soin, N. ; Zain, A.S.M. ; Aziz, M.N.I.A. ; Ahmad, I. 
2016Optimization of process parameter variations on threshold voltage in Ultrathin Pillar Vertical Double Gate MOSFET DeviceKaharudin, K.E. ; Hamidon, A.H. ; Salehuddin, F. ; Ifwat Abd Aziz, M.N. ; Ahmad, I. 
2015Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratioKaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Aziz, M.N.I.A. ; Ahmad, I. 
2016Variability analysis of process parameters on subthreshold swing in vertical DG-MOSFET deviceKaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Zain, A. ; Abd Aziz, M.N.I. ; Ahmad, I.