Browsing by Author Elgomati, H.A.
Showing results 1 to 14 of 14
| Issue Date | Title | Author(s) |
|---|---|---|
| 2011 | Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Elgomati, H.A. ; Majlis, B.Y. |
| 2011 | Application of Taguchi method in the optimization of process variation for 32nm CMOS technology | Elgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Apte, P.R. |
| 2010 | Characterization of fabrication process noises for 32nm NMOS devices | Elgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Ziad, T. |
| 2011 | Cobalt silicide and titanium silicide effects on nano devices | Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. ; Ahmad, I. ; Zaharim, A. ; Hamid, F.A. |
| 2017 | Control factors optimization on threshold voltage and leakage current in 22 nm NMOS transistor using Taguchi method | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Salehuddin, F. ; Mohd, A.S. ; Noor, Z.A. ; Elgomati, H.A. |
| 2013 | Design and optimization of 22 nm gate length high-k/metal gate NMOS transistor | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Elgomati, H.A. ; Salehuddin, F. |
| 2012 | Design and optimization of 22nm NMOS transistor | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. |
| 2012 | Modeling and optimizing of threshold voltage of 32nm NMOS transistor using L18 orthogonal array Taguchi method | Elgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. |
| 2012 | Modelling of process parameters for 32nm PMOS transistor using Taguchi method | Elgomati, H.A. ; Majlis, B.Y. ; Hamid, A.M.A. ; Susthitha, P.M. ; Ahmad, I. |
| 2011 | Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Elgomati, H.A. ; Majlis, B.Y. ; Apte, P.R. |
| 2012 | Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal array | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Hamid, A.M.A. ; Menon, P.S. ; Elgomati, H.A. ; Majlis, B.Y. ; Apte, P.R. |
| 2011 | Optimizing 35nm NMOS devices V TH and I LEAK by controlling active area and halo implantation dosage | Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. ; Ahmad, I. ; Zaharim, A. ; Hamid, F.A. |
| 2012 | Scaling down of the 32 nm to 22 nm gate length NMOS transistor | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. |
| 2011 | Statistical optimization for process parameters to reduce variability of 32 nm PMOS transistor threshold voltage | Elgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Mohamad, T.Z. ; Apte, P.R. |