Showing results 1 to 17 of 23
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| Issue Date | Title | Author(s) |
| 2009 | Analysis of programme outcomes achievement for electrical engineering programmes in UNITEN | Amirulddin, U.A.U. ; Osman, M. ; Hamid, F.A. |
| 2010 | Analyze and optimize the silicide thickness in 45nm CMOS technology using Taguchi method | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. |
| 2011 | Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Elgomati, H.A. ; Majlis, B.Y. |
| 2011 | Application of Taguchi method in the optimization of process variation for 32nm CMOS technology | Elgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Apte, P.R. |
| 2010 | Characterization and optimizations of silicide thickness in 45nm pMOS device | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. |
| 2011 | Cobalt silicide and titanium silicide effects on nano devices | Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. ; Ahmad, I. ; Zaharim, A. ; Hamid, F.A. |
| 2017 | Development of technical skills in Electrical Power Engineering students: A case study of Power Electronics as a Key Course | Hussain, I.S. ; Hamid, F.A. |
| 2010 | Effect of process parameter variations on threshold voltage in 45nm NMOS device | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. |
| 2012 | Impact of different dose and angle in HALO structure for 45nm NMOS device | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. |
| 2010 | Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. |
| 2017 | The Implementation of key course concept in the evaluation of BEEE programme in UNITEN | Nordin, F.H. ; Hamid, F.A. |
| 2011 | Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS device | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. |
| 2011 | Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Elgomati, H.A. ; Majlis, B.Y. ; Apte, P.R. |
| 2011 | Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Hashim, U. ; Apte, P.R. |
| 2011 | Optimization of process parameter variability in 45 nm PMOS device using Taguchi method | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. |
| 2012 | Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal array | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Hamid, A.M.A. ; Menon, P.S. ; Elgomati, H.A. ; Majlis, B.Y. ; Apte, P.R. |
| 2011 | Optimizing 35nm NMOS devices V TH and I LEAK by controlling active area and halo implantation dosage | Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. ; Ahmad, I. ; Zaharim, A. ; Hamid, F.A. |