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| Issue Date | Title | Author(s) |
| 2014 | Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method | Salehuddin, F. ; Mohd Zain, A.S. ; Idris, N.M. ; Mat Yamin, A.K. ; Abdul Hamid, A.M. ; Ahmad, I. ; Menon, P.S. |
| 2016 | Application of taguchi method with the interaction test for lower DIBL IN WSix/TiO2 channel vertical double gate NMOS | Kaharudin, K.E. ; Salehuddin, F. ; Zain, A.S.M. ; Aziz, M.N.I.A. ; Ahmad, I. |
| 2017 | Control factors optimization on threshold voltage and leakage current in 22 nm NMOS transistor using Taguchi method | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Salehuddin, F. ; Mohd, A.S. ; Noor, Z.A. ; Elgomati, H.A. |
| 2015 | Determination of impact damage severity level in Sheet Molding Compound composite material using thermography method - A preliminary study | Mohamed, A.A. ; Disele, T.L. ; Ahmad, I. ; Mohd, S. |
| 2015 | Development of process parameters for 22 nm PMOS using 2-D analytical modeling | Maheran, A.H.A. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Faizah, Z.A.N. |
| 1998 | Effect of backside films on Rapid Thermal Oxidation (RTO) growth on silicon wafers | Omar, Abdullah b. ; Ahmad, Ibrahim b. ; Ahmad, I. |
| 2014 | Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. |
| 2016 | Electrical characterization of different high-k dielectrics with tungsten silicide in vertical double gate nmos structure | Kaharudin, K.E. ; Salehuddin, F. ; Soin, N. ; Zain, A.S.M. ; Aziz, M.N.I.A. ; Ahmad, I. |
| 2017 | Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium | Sahari, S.K. ; Kashif, M. ; Sutan, N.M. ; Embong, Z. ; Nik Zaini Fathi, N.A.F. ; Hamzah, A.A. ; Sapawi, R. ; Majlis, B.Y. ; Ahmad, I. |
| 2016 | Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS | Atan, N. ; Ahmad, I. ; Majlis, B.Y. ; Azle, M.F. |
| 2016 | Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics | Roslan, P.S.A. ; Ker, P.J. ; Ahmad, I. ; Pasupuleti, J. ; Fam, P.Z. |
| 2014 | Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi method | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. |
| 2016 | Optimization of process parameter variations on threshold voltage in Ultrathin Pillar Vertical Double Gate MOSFET Device | Kaharudin, K.E. ; Hamidon, A.H. ; Salehuddin, F. ; Ifwat Abd Aziz, M.N. ; Ahmad, I. |
| 2017 | Performance characterization of schottky tunneling graphene field effect transistor at 60 nm gate length | Abidin, N.F.Z. ; Ahmad, I. ; Ker, P.J. ; Menon, P.S. |
| 2016 | Process parameter optimisation for minimum leakage current in a 22nm p-type MOSFET using Taguchi method | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Salehuddin, F. ; Mohd Zain, A.S. |
| 2016 | Process Parameters Optimization of 14nm MOSFET Using 2-D Analytical Modelling | Noor Faizah, Z.A. ; Ahmad, I. ; Ker, P.J. ; Siti Munirah, Y. ; Mohd Firdaus, R. ; Md Fazle, E. ; Menon, P.S. |
| 2016 | Process parameters optimization of 14nm p-type MOSFET using 2-D analytical modeling | Noor Faizah, Z.A. ; Ahmad, I. ; Ker, P.J. ; Siti Munirah, Y. ; Mohd Firdaus, R. ; Mah, S.K. ; Menon, P.S. |
| 2015 | Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method | Maheran, A.H.A. ; Menon, P.S. ; Shaari, S. ; Ahmad, I. ; Faizah, Z.A.N. |
| 2015 | Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratio | Kaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Aziz, M.N.I.A. ; Ahmad, I. |
| 2014 | Taguchi optimization of a SiGe/Si quantum dot SOI-based lateral PIN photodiode | Menon, P.S. ; Tasirin, S.K. ; Ahmad, I. ; Abdullah, S.F. |