| Issue Date | Title | Author(s) |
| 2006 | A study on inter-metallic compound formation and structure of lead free SnAgCu solder system | Ahmad, I. ; Jiun, H.H. ; Leng, E.P. ; Majlis, B.Y. ; Jalar, A. ; Wagiran, R. |
| 2010 | Characterization of fabrication process noises for 32nm NMOS devices | Elgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Ziad, T. |
| 2004 | Deflection analysis of epitaxially deposited polysilicon encapsulation for MEMS devices | Hamzah, A.A. ; Majlis, B.Y. ; Ahmad, I. |
| 2012 | Design and optimization of 22nm NMOS transistor | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. |
| 2006 | Effect of reflow profile (RSP Vs RTP) On Su/3.8Ag/0.7Cu solder joint strength | Eu, P.-L. ; Ahmad, I. ; Jalar, A. ; Kamarudin, H. ; Majlis, B.Y. |
| 2006 | Fabrication of platinum membrane on silicon for MEMS microphone | Hamzah, A.A. ; Majlis, B.Y. ; Ahmad, I. |
| 2006 | Formation of thick spin-on glass (SOG) sacrificial layer for capacitive accelerometer encapsulation | Hamzah, A.A. ; Majlis, B.Y. ; Ahmad, I. |
| 2007 | HF etching of sacrificial spin-on glass in straight and junctioned microchannels for MEMS microstructure release | Hamzah, A.A. ; Majlis, B.Y. ; Ahmad, I. |
| 2016 | Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS | Atan, N. ; Ahmad, I. ; Majlis, B.Y. ; Azle, M.F. |
| 2012 | Modeling and optimizing of threshold voltage of 32nm NMOS transistor using L18 orthogonal array Taguchi method | Elgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. |
| 2012 | Modelling of process parameters for 32nm PMOS transistor using Taguchi method | Elgomati, H.A. ; Majlis, B.Y. ; Hamid, A.M.A. ; Susthitha, P.M. ; Ahmad, I. |
| 2006 | Modelling of sacrificial spin-on glass (SOG) etching in non-straight microchannels using hydrofluoric acid | Hamzah, A.A. ; Majlis, B.Y. ; Ahmad, I. |
| 2011 | Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Elgomati, H.A. ; Majlis, B.Y. ; Apte, P.R. |
| 2007 | Optimization of nickel thickness on substrate for TBGA using SAC387 solder material | Ahmad, I. ; Majlis, B.Y. ; Jalar, A. ; Leng, E.P. |
| 2012 | Scaling down of the 32 nm to 22 nm gate length NMOS transistor | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. |
| 2008 | Selection of high strength encapsulant for MEMS devices undergoing high-pressure packaging | Hamzah, A.A. ; Husaini, Y. ; Majlis, B.Y. ; Ahmad, I. |
| 2006 | Solder joint strength of lead free solders under multiple reflow and high temperature storage condition | Ahmad, I. ; Jalar, A. ; Majlis, B.Y. ; Leng, E.P. ; San, Y.S. |
| 2008 | Sputtered encapsulation as wafer level packaging for isolatable MEMS devices: A technique demonstrated on a capacitive accelerometer | Hamzah, A.A. ; Yunas, J. ; Majlis, B.Y. ; Ahmad, I. |
| 2009 | Statistical design of ultra-thin SiO2 for nanodevices | Hashim, U. ; Abdul Fatah, M.F.A. ; Ahmad, I. ; Majlis, B.Y. |